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| STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2 - 5A TO-220/FP/DPAK Zener-Protected SuperMESHTM MOSFET Table 1: General Features TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z Figure 1: Package Id 5A 5A 5A PTOT 90 W 25 W 90 W 3 1 2 1 3 2 VDSS@ TJmax 650 V 650 V 650 V RDS(on) < 1.6 < 1.6 < 1.6 TYPICAL RDS(on) = 1.2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING DPAK Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STP5NK60Z STP5NK60ZFP STD5NK60ZT4 MARKING P5NK60Z P5NK60ZFP D5NK60 PACKAGE TO-220 TO-220FP DPAK PACKAGING TUBE TUBE TAPE & REEL Rev. 7 December 2005 1/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 5 3.16 20 90 0.72 3000 4.5 2500 Value TO-220/DPAK 600 600 30 5 (*) 3.16 (*) 20 (*) 25 0.2 TO-220FP V V V A A A W W/C V V/ns V C Unit ( ) Pulse width limited by safe operating area (1) ISD 5A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed Thermal Data TO-220/DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.39 62.5 300 TO-220FP 5 C/W C/W C (#) When mounted on 1inch FR-4, 2 Oz copper board. Table 4: Avalanche Characteristics Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 5 220 Unit A mJ Table 5: Gate-Source Zener Diode Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 50A VGS = 10V, ID = 2.5 A 3 3.75 1.2 Min. 600 1 50 10 4.5 1.6 Typ. Max. Unit V A A A V Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Coss eq. (3) td(on) tr td(off) tr tr(Voff) tf tc Qg Qgs Qgd Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 8 V, ID = 2.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 4 690 90 20 40 16 25 36 25 12 10 24 26 6 20 34 Max. Unit S pF pF pF pF ns ns ns ns ns ns ns nC nC nC VGS = 0V, VDS = 0V to 480V VDD = 300 V, ID = 2.5 A RG = 4.7 VGS = 10 V (see Figure 20) VDD = 480V, ID = 5 A, RG = 4.7, VGS = 10V (see Figure 20) VDD = 400V, ID = 5 A, VGS = 10V (see Figure 23) Table 8: Source Drain Diode Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, VGS = 0 ISD = 5 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see Figure 21) 485 2.7 11 Test Conditions Min. Typ. Max. 5 20 1.6 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Figure 3: Safe Operating Area For TO-220/ DPAK Figure 6: Thermal Impedance For TO-220/ DPAK Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Transfer Characteristics 4/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Figure 9: Transconductance Figure 12: Static Drain-source On Resistance Figure 10: Gate Charge vs Gate-source Voltage Figure 13: Capacitance Variations Figure 11: Normalized Gate Threshold Voltage vs Temperature Figure 14: Normalized On Resistance vs Temperature Figure 15: 5/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Figure 16: Source-Drain Forward Characteristics Figure 18: Normalized BVdss vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature 6/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Figure 19: Unclamped Inductive Load Test Circuit Figure 22: Unclamped Inductive Wafeform Figure 20: Switching Times Test Circuit For Resistive Load Figure 23: Gate Charge Test Circuit Figure 21: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 9/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 10/14 G STP5NK60Z - STP5NK60ZFP- STD5NK60Z TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 11/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 12/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Table 9: Revision History Date 05-Apr-2005 29-Apr-2005 06-Sep-2005 14-Oct-2005 28-Oct-2005 14-Nov-2005 15-Dec-2005 Revision 1 2 3 4 5 6 7 Description of Changes First issue Modified value in Table 7. Inserted Ecopack indication Modified value on Table 1 Tape & Reel info added Modified value on Table 6 Various corrections 13/14 STP5NK60Z - STP5NK60ZFP- STD5NK60Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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